Metal–semiconductor–metal Photodetectors | <<< | >>> | Feedback |
You can buy metal-semiconductor-metal photodetectors from:
- A.L.S. GmbH offers ultrafast MSN photodetectors for a wide range of wavelength with a bandwidth of up to 35 GHz.
Acronym: MSM photodetector
Definition: fast photodetector devices based on metal–semiconductor (Schottky) contacts
A metal–semiconductor–metal photodetector (MSM detector) is a photodetector device containing two Schottky contacts, i.e., two metallic electrodes on a semiconductor material, in contrast to a p–n junction as in a photodiode. During operation, some electric voltage is applied to the electrodes. When light impinges on the semiconductor between the electrodes, it generates electric carriers (electrons and holes), which are collected by the electric field and thus can form a photocurrent.
MSM detectors can be made faster than photodiodes. Their detection bandwidths can reach hundreds of gigahertz, making them suitable for very high-speed optical fiber communications.
Bibliography
| [1] | W. C. Koscielniak et al., “Dynamic behavior of photocarriers in a GaAs metal–semiconductor–metal photodetector with sub-half-micron electrode pattern”, Appl. Phys. Lett. 54 (6), 567 (1989) |
| [2] | J. B. D. Soole and H. Schumacher, “InGaAs metal–semiconductor–metal photodetectors for long wavelength optical communications”, IEEE J. Quantum Electron. 27 (3), 737 (1991) |
| [3] | C. Moglestue et al., “Picosecond pulse response characteristics of GaAs metal–semiconductor–metal photodetectors”, J. Appl. Phys. 70 (4), 2435 (1991) |
| [4] | S. Y. Chou et al., “Ultrafast nanoscale metal–semiconductor–metal photodetectors on bulk and low-temperature grown GaAs”, Appl. Phys. Lett. 61 (7), 819 (1992) |
| [5] | J.-W. Shi et al., “Metal–semiconductor–metal traveling-wave photodetectors”, IEEE Photon. Technol. Lett. 13 (6), 623 (2001) |
See also: photodetectors, photodiodes, bandwidth
