Where to Buy p–i–n Photodiodes
Many photodiodes have a p–i–n design, which can result in a high quantum efficiency and an increased detection bandwidth. This principle can be used with different materials like silicon, germanium and indium gallium arsenide.
More general products: photodiodes
Related product category: detectors and measurements
| E | Learn before you buy! See our encyclopedia article on p–i–n photodiodes! Related articles: photodiodes, metal–semiconductor–metal photodetectors |
15 suppliers for p–i–n photodiodes are listed in the RP Photonics Buyer's Guide. Both manufacturers and distributors can be registered.
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| Suppliers with Ad Package presenting their product descriptions | |
|---|---|
| Company | Product Description |
 Lasers, Optics, Electronics. Made in Germany. Bertha-von-Suttner-Str. 5 37085 Göttingen Germany www.alphalas.com E-mail: |  Very fast rise time p–i–n photodiodes for measurement of optical waveforms with rise times starting from 10 ps and spectral coverage from 170 to 2600 nm (VUV to IR) have bandwidths from DC up to 30 GHz. Configurations include free-space, fiber receptacle or SM-fiber-pigtailed options and have compact metal housings for noise immunity. The UV-extended versions of the Si photodiodes are the only commercial products that cover the spectral range from 170 to 1100 nm with a rise time < 50 ps. For maximum flexibility, most models are not internally terminated. A 50 Ohm external termination supports the highest speed operation and a high impedance load generates large amplitude signals. Applications include pulse form and duration measurement, laser synchronization, mode beating monitoring and heterodyne measurements. Balanced photodiodes complement the large selection of models. |
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| All Suppliers | |
|---|---|
| From your country: | |
2701 Northwestern Parkway Santa Clara, CA 95051 United States | www.acphotonics.com E-mail: |
126 Baywood Avenue Longwood, FL 32750 United States | analogmodules.com E-mail: |
Discovery Semiconductors, Inc. 119 Silvia Street Ewing, NJ 08628 United States | |
Electro Optical Components, Inc. 5460 Skylane Blvd. Santa Rosa, CA 95403 United States | |
1445 NW Frontage Rd Socorro NM, 87801 United States | |
4 Olsen Avenue Edison, New Jersey 08820 United States | |
3830 Packard Road Suite 280 Ann Arbor, MI United States | www.qphotonics.com E-mail: |
| Outside America: | |
Lasers, Optics, Electronics. Made in Germany. Bertha-von-Suttner-Str. 5 37085 Göttingen Germany www.alphalas.com E-mail: | Very fast rise time p–i–n photodiodes for measurement of optical waveforms with rise times starting from 10 ps and spectral coverage from 170 to 2600 nm (VUV to IR) have bandwidths from DC up to 30 GHz. Configurations include free-space, fiber receptacle or SM-fiber-pigtailed options and have compact metal housings for noise immunity. The UV-extended versions of the Si photodiodes are the only commercial products that cover the spectral range from 170 to 1100 nm with a rise time < 50 ps. For maximum flexibility, most models are not internally terminated. A 50 Ohm external termination supports the highest speed operation and a high impedance load generates large amplitude signals. Applications include pulse form and duration measurement, laser synchronization, mode beating monitoring and heterodyne measurements. Balanced photodiodes complement the large selection of models. |
Advanced Technology Innovation Centre Loughborough University Science and Enterprise Parks 5 Oakwood Drive Loughborough LE11 3QF United Kingdom | www.eluxi.co.uk E-mail: |
Koepenicker Str. 325 12555 Berlin Germany | www.epigap-optronic.de E-mail: |
Peter-Behrens-Straße 15 12459 Berlin Germany | |
No. 2, Kuan FU S. Rd., Hsinchu Industrial Park 30351, Hsinchu Hsien Taiwan | www.hlj.com.tw/en E-mail: |
Werner-von-Siemens-Straße 15 82140 Olching Germany | www.lasercomponents.com E-mail: |
137 avenue Anatole France, 94600 Choisy le Roi France | www.nano-giga.fr E-mail: |
Room 1412, No.1001, Shimao Road Honggutan New District, Nanchang Jiangxi, 330038 China | www.vfibre.com E-mail: |
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