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Where to Buy p–i–n Photodiodes

Many photodiodes have a p–i–n design, resulting in high quantum efficiency and increased detection bandwidth. This design is used with various materials, including silicon, germanium, and indium gallium arsenide.

More general products: photodiodes

Related product category: detectors and measurements

Before You Buy: Learn About p–i–n Photodiodes

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Manufacturers and Other Suppliers for p–i–n Photodiodes

14 suppliers for p–i–n photodiodes are listed in the RP Photonics Buyer's Guide. Both manufacturers and distributors can be registered.

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Suppliers with Advertising Package
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CompanyProduct Description

Lasers, Optics, Electronics. Made in Germany.

ALPHALAS GmbH

Bertha-von-Suttner-Str. 5
37085 Göttingen
Germany
web link www.alphalas.com
E-mail:
p--i--n photodiodes

Very fast rise time p–i–n photodiodes for measurement of optical waveforms with rise times starting from 10 ps and spectral coverage from 170 to 2600 nm (VUV to IR) have bandwidths from DC up to 30 GHz. Configurations include free-space, fiber receptacle or SM-fiber-pigtailed options and have compact metal housings for noise immunity. The UV-extended versions of the Si photodiodes are the only commercial products that cover the spectral range from 170 to 1100 nm with a rise time < 50 ps. For maximum flexibility, most models are not internally terminated. A 50 Ohm external termination supports the highest speed operation and a high impedance load generates large amplitude signals. Applications include pulse form and duration measurement, laser synchronization, mode beating monitoring and heterodyne measurements. Balanced photodiodes complement the large selection of models.

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From your country:

AC Photonics

2701 Northwestern Parkway
Santa Clara, CA 95051
United States
www.acphotonics.com
E-mail:

Discovery Semiconductors, Inc.

119 Silvia Street
Ewing, NJ 08628
United States

Electro Optical Components, Inc.

5460 Skylane Blvd.
Santa Rosa, CA 95403
United States

Intor Inc.

1445 NW Frontage Rd
Socorro NM, 87801
United States

OSI Laser Diode, Inc.

4 Olsen Avenue
Edison, New Jersey 08820
United States

QPhotonics, LLC

3830 Packard Road
Suite 280
Ann Arbor, MI
United States
www.qphotonics.com
E-mail:
Outside America:

Lasers, Optics, Electronics. Made in Germany.

ALPHALAS GmbH

Bertha-von-Suttner-Str. 5
37085 Göttingen
Germany
web link www.alphalas.com
E-mail:
p--i--n photodiodes

Very fast rise time p–i–n photodiodes for measurement of optical waveforms with rise times starting from 10 ps and spectral coverage from 170 to 2600 nm (VUV to IR) have bandwidths from DC up to 30 GHz. Configurations include free-space, fiber receptacle or SM-fiber-pigtailed options and have compact metal housings for noise immunity. The UV-extended versions of the Si photodiodes are the only commercial products that cover the spectral range from 170 to 1100 nm with a rise time < 50 ps. For maximum flexibility, most models are not internally terminated. A 50 Ohm external termination supports the highest speed operation and a high impedance load generates large amplitude signals. Applications include pulse form and duration measurement, laser synchronization, mode beating monitoring and heterodyne measurements. Balanced photodiodes complement the large selection of models.

ELUXI Ltd.

Advanced Technology Innovation Centre
Loughborough University Science and Enterprise Parks
5 Oakwood Drive
Loughborough LE11 3QF
United Kingdom
www.eluxi.co.uk
E-mail:

EPIGAP Optronic

Koepenicker Str. 325
12555 Berlin
Germany
www.epigap-optronic.de
E-mail:

First Sensor AG

Peter-Behrens-Straße 15
12459 Berlin
Germany

HLJ Technology Co., Ltd.

No. 2, Kuan FU S. Rd., Hsinchu Industrial Park
30351, Hsinchu Hsien
Taiwan
www.hlj.com.tw/en
E-mail:

Laser Components GmbH

Werner-von-Siemens-Straße 15
82140 Olching
Germany
www.lasercomponents.com
E-mail:

Nano-Giga

137 avenue Anatole France,
94600 Choisy le Roi
France
www.nano-giga.fr
E-mail:

VFIBRE Ltd.

Room 1412, No.1001, Shimao Road
Honggutan New District, Nanchang
Jiangxi, 330038
China
www.vfibre.com
E-mail:

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